2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[B-5-3]Improvement of Interfacial Characteristics and Reliability in Poly/SiON Gate Stack by Catalytic Effect of Hafnium Incorporation Technique

T. Shimizu1、Y. Arayashiki1、S. Inumiya1、K. Nakajima1、T. Aoyama1、K. Eguchi1(1.Toshiba Corp.)
https://doi.org/10.7567/SSDM.2009.B-5-3
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