2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[A-2-3]Grain boundary effect on charge transport in pentacene thin films

M. Weis1、K. Gmucova1、V. Nadazdy1、D. Hasko2、D. Taguchi3、T. Manaka3、M. Iwamoto3(1.Slovak Academy of Sciences、2.International Laser Centre , Slovakia、3.Tokyo Tech. , Japan)
https://doi.org/10.7567/SSDM.2010.A-2-3
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