2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[A-3-1]Improved the power efficiency of white phosphorescent organic light-emitting diode with thin double emitting-layers and hole-trapping mechanism

F. S. Juang1、S. H. Wang1、Y. S. Tsai1、M. H. Gao1、Y. Chi2、H. P. Shieh3(1.National Formosa Univ.、2.National Tsing Hua Univ.、3.National Chiao Tung Univ. , Taiwan)
https://doi.org/10.7567/SSDM.2010.A-3-1
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