2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[A-3-3]High efficiency phosphorescent organic light-emitting diode by incorporating an electron transport material into emitting layer

F. S. Juang1、S. H. Wang1、Y. S. Tsai1、B. S. Hsieh1、Y. Chi2、H. P. Shieh3(1.National Formosa Univ.、2.National Tsing Hua Univ.、3.National Chiao Tung Univ. , Taiwan)
https://doi.org/10.7567/SSDM.2010.A-3-3
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