2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
戻る
International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[A-4-3]The influence of the intensity of an electric field on properties of P(VDF-TeFE) thin films during the annealing process

J. H. Jeong1、D. Terashima1、C. Kimura1、H. Aoki1(1.Osaka Univ. , Japan)
https://doi.org/10.7567/SSDM.2010.A-4-3
PDFダウンロードPDFダウンロード
戻る