2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[A-7-3]Bias-temperature-instability and thermal anneal effects of organic thin-film transistors

P. H. Chen1、P. Y. Lo1,2、T. S. Hu2、P. W. Li1(1.National Central Univ.、2.Indus. Tech. Res. Inst. , Taiwan)
https://doi.org/10.7567/SSDM.2010.A-7-3
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