2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[A-8-2]3 V-driven flexible organic transistors with mobility exceeding 2 cm2/Vs

K. Fukuda1、N. Uchiyama1、T. Sekitani1、U. Zschieschang2、H. Klauk2、T. Yamamoto3、K. Takimiya3、T. Someya1(1.Univ. of Tokyo , Japan、2.Max Planck Inst. , Germany、3.Hiroshima Univ. , Japan)
https://doi.org/10.7567/SSDM.2010.A-8-2