2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[A-8-3]Different interfacial carrier behaviors between α-NPD and pentacene double-layer device with a polyimide blocking-layer by time-resolved optical second harmonic generation

L. Zhang1、D. Taguchi1、J. Li1、T. Manaka1、M. Iwamoto1(1.Tokyo Tech , Japan)
https://doi.org/10.7567/SSDM.2010.A-8-3
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