2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[B-1-2]Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation

C. H. Lee1、T. Nishimura1,2、T. Tabata1、S. Wang1、K. Nagashio1,2、K. Kita1,2、A. Toriumi1,2(1.Univ. of Tokyo、2.JST-CREST , Japan)
https://doi.org/10.7567/SSDM.2010.B-1-2
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