2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2010 International Conference on Solid State Devices and Materials

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜9月24日The University of Tokyo, Tokyo, Japan

[B-2-2]Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds

K. Toko1、T. Sakane1、H. Yokoyama1、M. Kurosawa1、T. Sadoh1、M. Miyao1(1.Kyushu Univ. , Japan)
https://doi.org/10.7567/SSDM.2010.B-2-2
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