2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-1-2]High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate

S. Nakazawa1、N. Tsurumi1、M. Nishijima1、Y. Anda1、M. Ishida1、T. Ueda1、T. Tanaka1(1.Panasonic Corp. , Japan)
https://doi.org/10.7567/SSDM.2011.A-1-2
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