2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-1-3]RF power characteristics of high-thermal-efficiency AlGaN/GaN HEMTs on diamond

K. Hirama1、M. Kasu1、Y. Taniyasu1(1.NTT Corp. NTT Basic Res. Labs. , Japan)
https://doi.org/10.7567/SSDM.2011.A-1-3
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