2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-1-4]Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

A. Imai1、K. Yamanaka2、Y. Suzuki1、T. Nanjo1、M. Suita1、K. Shiozawa1、Y. Abe1、E. Yagyu1、A. Shima1(1.Advanced Tech. R&D Center, Mitsubishi Electric Corp.、2.Information Tech. R&D Center, Mitsubishi Electric Corp. , Japan)
https://doi.org/10.7567/SSDM.2011.A-1-4
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