2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-2-3]Effects of Plasma-PH3 passivation on Mobility Degradation Mechanisms and Current Conduction Mechanisms of In0.53Ga0.47As N-MOSFET

A. B. S. Sumarlina1,2、H. J. Oh1、A. Du2、S. J. Lee1(1.National Univ. of Singapore、2.GLOBALFOUNDRIES Singapore Pte.Ltd. , Singapore)
https://doi.org/10.7567/SSDM.2011.A-2-3
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