2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-2-4]In0.53Ga0.47As Channel N-MOSFETs with Shallow Metallic S/D Extension

Z. Zhu1、X. Gong1、 Ivana1、Y. C. Yeo1(1.National Univ. of Singapore , Singapore)
https://doi.org/10.7567/SSDM.2011.A-2-4
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