2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-2]Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition

Y. Kawamura1、M. Tani1、N. Hattori2、N. Miyatake2、M. Horita1、Y. Ishikawa1、Y. Uraoka1,3(1.NAIST、2.Mitsui Eng. and Shipbuilding Co., Ltd.、3.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2011.A-5-2
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