2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-3]Effects of Excimer Laser annealing of Oxide Semiconductor Films

M. Fujii1、R. Ishihara2、T. Chen2、J. Van der Cingel2、M. R. T. Mofrad2、M. Kasami3、K. Yano3、M. Horita1,4、Y. Ishikawa1,4、Y. Uraoka1,4(1.NAIST , Japan、2.Delft University of Technology , The Netherlands、3.Idemitsu Kosan Co., Ltd.、4.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2011.A-5-3