2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-4]High Mobility Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with a Strong Reduction Capping Layer

H. W. Zan1、C. C. Yeh2、C. C. Tsai1、H. F. Meng1(1.National Chiao Tung Univ.、2.E Ink Holdings Inc. , Taiwan)
https://doi.org/10.7567/SSDM.2011.A-5-4
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