2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-5-5]The Influence of a SnInGaZnO Electron Barrier Layer on the performance of Low-Driving Voltage InGaZnO Thin-Film Transistors

H. Y. Huang1、S. J. Wang1、C. H. Wu2、C. K. Chiang1、Y. C. Huang1、J. Y. Su1(1.National Cheng Kung Univ.、2.Chung Hua Univ. , Taiwan)
https://doi.org/10.7567/SSDM.2011.A-5-5
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