2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-8-1]High Integrity SiO2 Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

H. Kambayashi1,3、T. Nomura1、S. Kato1、H. Ueda2、A. Teramoto3、S. Sugawa3、T. Ohmi3(1.Advanced Power Device Res. Association、2.Tokyo Electron Tech. Development Inst. Inc.、3.Tohoku Univ. , Japan)
https://doi.org/10.7567/SSDM.2011.A-8-1
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