2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-8-3]Impacts of Dry Etching of GaN and AlGaN Surfaces on Interface Properties of GaN-based MOS Structures

S. Kim1、Y. Hori1、N. Azumaishi1、T. Hashizume1,2(1.Hokkaido Univ.、2.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2011.A-8-3
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