2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[A-8-4]Damage-free GaN Etching by Chlorine Neutral Beam

Y. Tamura1,3、X.Y. Wang1,3、C.H. Huang1,3、T. Kubota1、J. Ohta2、H. Fujioka2,3、S. Samukawa1,3(1.Tohoku Univ.、2.Univ. of Tokyo、3.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2011.A-8-4
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