2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[AL-6-5]Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN

R. Hasegawa1、N. Yafune1、H. Tokuda1、Y. Mori3、H. Amano4、M. Kuzuhara1(1.Univ. of Fukui、2.Sharp Corp.、3.Osaka Univ.、4.Nagoya Univ. , Japan)
https://doi.org/10.7567/SSDM.2011.AL-6-5
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