2011 International Conference on Solid State Devices and Materials
2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
2011 International Conference on Solid State Devices and Materials
2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[AL-6-6]Fabrication of GaN MOSFET using Selectively Re-grown n+-GaN Layer on Etched Source and Drain Regions
D. S. Kim1、H. S. Kang1、C. H. Won1、C. H. Bu1、K. I. Jang1、C. M. Yang1、K. S. Im1、K. W. Kim1、S. D. Jung1、R. H. Kim1、M. K. Kwon1、J. H. Lee1(1.Kyungpook National Univ. , Korea)
