2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[AL-7-1]InAlN/AIN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage

Q. Zhou1、H. Chen1、C. Zhou1、Z. H. Feng2、S. J. Cai2、K. J. Chen1(1.Hong Kong Univ. of Sci. and Tech.、2.Hebei Semiconductor Res. Inst. , China)
https://doi.org/10.7567/SSDM.2011.AL-7-1
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