2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[AL-7-2]Selective Electrochemical Formation of Recessed-Oxide-Gate Structures for AlGaN/GaN HEMTs

N. Azumaishi1、N. Harada1、T. Hashizume1,2(1.Hokkaido Univ.、2.CREST-JST , Japan)
https://doi.org/10.7567/SSDM.2011.AL-7-2
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