2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[AL-7-4]AlGaN/GaN HEMTs on Silicon with Hybrid Schottky-Ohmic Drain for Improved DC Characteristics

Y. S. Lin1、Y. W. Lian1、H. C. Lu1、Y. C. Huang1、S. S. H. Hsu1(1.National Tsing Hua Univ. , Taiwan)
https://doi.org/10.7567/SSDM.2011.AL-7-4
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