2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
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International Conference on Solid State Devices and Materials
2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜9月30日Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[B-3-1]Room temperature fabrication of HfON gate insulator for low-voltage operating pentacene-based organic field-effect transistors

M. Liao1、H. Ishiwara1,2、S. Ohmi1(1.Tokyo Tech , Japan、2.Konkuk Univ. , Korea)
https://doi.org/10.7567/SSDM.2011.B-3-1
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