2013 International Conference on Solid State Devices and Materials
2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
2013 International Conference on Solid State Devices and Materials
2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
[A-2-3]A New Lateral Conductive Bridge Random Access Memory (L-CBRAM) by Fully CMOS Logic Compatible Process
Y.C. Lin1、Y.W. Chin1、M.C. Hsieh1、Y.D. Chih2、K.H. Tsai3、M.J. Tsai3、Y.C. King1、C.J. Lin1(1.National Tsing-Hua Univ.、2.Taiwan Semiconductor Manufacturing Company、3.Industrial Technology Research Inst. (Taiwan))
