2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-2-4]Excellent Scalability Including Self-Heating Phenomena of Vertical-Channel Field-Effect-Diode (FED) Type Capacitorless One Transistor DRAM Cell

T. Imamoto1,2、T. Endoh1,2(1.Tohoku Univ.、2.JST-CREST (Japan))
https://doi.org/10.7567/SSDM.2013.A-2-4
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