2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-3-1]Carrier Injection Induced Switching of Supper-lattice GeTe/Sb2Te3 Phase Change Memories

S. Kato1、M. Araidai1、K. Kamiya1、T. Yamamoto1、K. Shiraishi1、T. Ohyanagi2、N. Takaura2(1.Univ. of Tsukuba、2.Low-power Electronics Association & Project (Japan))
https://doi.org/10.7567/SSDM.2013.A-3-1