2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-4-3]Experimental Study of 3D Fin-Channel Charge Trapping Flash Memories with TiN Metal and Poly-Si Gates

Y.X. Liu1、T. Matsukawa1、K. Endo1、S. O'uchi1、J. Tsukada1、H. Yamauchi1、Y. Ishikawa1、W. Mizubayashi1、Y. Morita1、S. Migita1、H. Ota1、M. Masahara1(1.AIST (Japan))
https://doi.org/10.7567/SSDM.2013.A-4-3
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