2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-5-2]Organic ferroelectric gate FET memory using high-mobility rubrene thin film

T. Kanashima1、Y. Katsura1、M. Okuyama2(1.Osaka Univ.、2.Osaka Univ. (Japan))
https://doi.org/10.7567/SSDM.2013.A-5-2
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