2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-6-2]Conducting filament engineering by triple-layer RRAM for uniform resistive switching

D. Lee1、J. Park1、S. Park2、J. Woo1、E. Cha1、S. Lee1、Y. Koo1、K. Moon1、J. Song1、H. Hwang1(1.Pohang Univ. of Sci. and Tech.、2.Gwangju Inst. of Sci. and Tech. (Korea))
https://doi.org/10.7567/SSDM.2013.A-6-2
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