2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-6-3]Improvement of Cycling Disturbance and Yield Enhancement of ReRAM using Susceptibility-Aware Write

S.Y. Kim1,2、J.M. Baek1、D.J. Seo1、J.K. Park1、J.H. Chun1、K.W. Kwon1(1.Sungkyunkwan Univ.、2.Memory Division, Samsung Electronics Corp. Ltd. (Korea))
https://doi.org/10.7567/SSDM.2013.A-6-3
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