2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[A-8-2]The Impact of Bending and Light Exposure on the Resistive Switching Characteristics of Transparent Flexible ITO/ZnO/ITO Resistive RAM (RRAM)

C.L. Lin1、Y.H. Yang1、C.M. Wu1、P.C. Juan2、C.H. Soh1、Y.L. Huang1、W.Y. Chang1(1.Feng Chia Univ.、2.Mingchi Univ. of Tech. (Taiwan))
https://doi.org/10.7567/SSDM.2013.A-8-2
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