2013 International Conference on Solid State Devices and Materials
2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
2013 International Conference on Solid State Devices and Materials
2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
[B-1-3]Si:C-S/D Engineering using Cascade C7Hx Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D
T. Yamaguchi1、Y. Kawasaki1、T. Yamashita1、Y. Nishida1、M. Mizuo2、K. Maekawa1、M. Fujisawa1(1.Renesas Electronics Corp.、2.Renesas Semiconductor Engineering Corp. (Japan))
