2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-1-4]Impact of Additional Pt on Channel Stress Induced by NiSi Film Formation

M. Mizuo1、T. Yamaguchi2、S. Kudo2、Y. Hirose1,2、H. Kimura2、J. Tsuchimoto2、N. Hattori2(1.Renesas Semiconductor Engineering Corp.、2.Renesas Electronics Corp. (Japan))
https://doi.org/10.7567/SSDM.2013.B-1-4
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