2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-2-1]Low-temperature Microwave Annealing Process for Ge MOSFETs

Y.J. Lee1,6、S.S. Chuang2、C.I. Liu3、F.K. Hsueh1、P.J. Sung1、C.T Wu1、C.H. Lai4、Y.M. Wan3、M.I. Current5、T.Y. Tseng2(1.National Nano Device Lab.、2.National Chiao Tung Univ.、3.I-Shou Univ.、4.Chung Hua Univ.、5.Current Scientific、6.National Chung Hsing Univ. (Taiwan))
https://doi.org/10.7567/SSDM.2013.B-2-1
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