2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-4-1]Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO2/Si interface with atomic-scale resolution

T. Suwa1、K. Nagata2、H. Nohira3、K. Nakajima4、A. Teramoto1、A. Ogura2、K. Kimura4、T. Muro5、T. Kinoshita5、S. Sugawa1、T. Hattori1、T. Ohmi1(1.Tohoku Univ.、2.Meiji Univ.、3.Tokyo City Univ.、4.Kyoto Univ.、5.JASRI (Japan))
https://doi.org/10.7567/SSDM.2013.B-4-1