2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-4-3]Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge

S.K. Wang1、X.L. Wang1、L. Han1,2、W. Zhao1、B. Sun1、W.W. Wang.1、C. Zhao1、H.G. Liu1(1.Inst. of Microelectronics, Chinese Academy of Sciences、2.Southeast University (China))
https://doi.org/10.7567/SSDM.2013.B-4-3
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