2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
戻る
International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-5-2]Charge neutrality level shift in the Bardeen limit of Fermi-level pinning at atomically flat Ge/metal interface

T. Nishimura1,2、T. Nakamura1、T. Yajima1,2、K. Nagashil1,2、A. Toriumi1,2(1.The Univ. of Tokyo、2.JST-CREST (Japan))
https://doi.org/10.7567/SSDM.2013.B-5-2
PDFダウンロードPDFダウンロード
戻る