2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan
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International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜9月27日Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-6-1]Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental Realization

Y. Yang1、P. Guo1、W. Wang1、X. Gong1、L. Wang1、K.L. Low1、G. Han1、Y.C. Yeo1(1.National Univ. of Singapore (Singapore))
https://doi.org/10.7567/SSDM.2013.B-6-1
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