2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-2-5L]Modeling of Read Disturbance Mechanism due to Carrier Trapping in Sub-20nm NAND Flash Memory

D. Kang1、K. Lee1、S. Kwon2、S. Kim2、Y. Hwang2、H. Shin1(1.Seoul Natioanl Univ.、2.Samsung Electronics Corp., Ltd. (Korea))
https://doi.org/10.7567/SSDM.2014.A-2-5L
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