2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-3-4]2T1C Gain Cell Memory with Improved Retention Characteristic By Dual Coupling Method for SOC application Using 45nm-logic compatible CMOS Process

C.J. Lee1、Y.K. Lee1、M.K. Park1、S.W. Kim1、D.H. Lee1(1.Samsung Electronics Corp. (Korea))
https://doi.org/10.7567/SSDM.2014.A-3-4
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