2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
戻る
International Conference on Solid State Devices and Materials
2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-4-1]108 Endurance Nonvolatile Memory Transistor with 100 nm Metal Gate

L.V. Hai1、M. Takahashi1、W. Zhang1、S. Sakai1(1.AIST (Japan))
https://doi.org/10.7567/SSDM.2014.A-4-1
PDFダウンロードPDFダウンロード
戻る