2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜9月11日Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-8-3]A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit

T. Ohsawa1、S. Miura2、H. Honjo2、S. Ikeda1、T. Hanyu1、H. Ohno1、T. Endoh1(1.Tohoku Univ.、2.NEC Corp. (Japan))
https://doi.org/10.7567/SSDM.2014.A-8-3
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