2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan
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International Conference on Solid State Devices and Materials
2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan

[A-1-2]High Power and High Temperature Operation over 3W/85°C of an InGaN Laser using a Novel Double-heat-flow Packaging Technology

○S. Nozaki1, S. Yoshida2, K. Yamanaka2, O. Imafuji1, S. Takigawa1, T. Katayama1, T. Tanaka1(1.Panasonic Corp., 2.Panasonic Semiconductor Solutions Co., Ltd.(Japan))
https://doi.org/10.7567/SSDM.2015.A-1-2
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