2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan
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International Conference on Solid State Devices and Materials
2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan

[A-4-2]Ge/graded-SiGe Multiplication Layers for Low-voltage and Low-noise Ge Avalanche Photodiodes on Si

○Y. Miyasaka1, T. Hiraki2,3, K. Okazaki2,3, K. Takeda2,3, T. Tsuchizawa2,3, K. Yamada2,3, K. Wada1, Y. Ishikawa1(1.Univ. of Tokyo, 2.NTT Device Tech. Labs., 3.NTT Nanophotonics Center(Japan))
https://doi.org/10.7567/SSDM.2015.A-4-2
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