2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan
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International Conference on Solid State Devices and Materials
2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜9月30日Sapporo Convention Center, Sapporo, Japan

[B-4-4]N-type Doping Effect of Transferred MoS2 and WSe2 Monolayer

○C. P. Lin1, P. S. Liu1, L. S. Lyu1, M. Y. Li2, C. C. Cheng1, T. H. Lee1, W. H. Chang1, L. J. Li3, T. H. Hou1(1.National Chiao Tung Univ., 2.Academia Sinica, 3.King Abdullah Univ. of Science and Technology(Taiwan))
https://doi.org/10.7567/SSDM.2015.B-4-4
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